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Navitas Semiconductor Corporation designs, develops, and sells gallium nitride (GaN) power integrated circuits in China, the United States, Taiwan, Korea, and internationally. The company was incorporated in 2013 and is based in Dublin, Ireland.

Navitas Semiconductor Corporation

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SEVEN NEW GAN POWER ICS WITH 650V RATING INTRODUCED, TARGETING EMERGING APPLICATIONS ACROSS EDGE AI COMPUTING AND E  MOBILITY HYDERABAD, INDIA, MAY 11, 2026 /PRNEWSWIRE/ -- CYIENT SEMICONDUCTORS PRIVATE LIMITED TODAY ANNOUNCED THE LAUNCH OF SEVEN NEW GALLIUM NITRIDE (GAN) POWER DEVICES FOR THE INDIAN MARKET, DEVELOPED USING NAVITAS SEMICONDUCTOR'S (NASDAQ: NVTS) INDUSTRY LEADING GAN TECHNOLOGY.  THE LAUNCH MARKS CYIENT SEMICONDUCTORS' FIRST COMMERCIAL GAN PRODUCT FAMILY AND A MAJOR MILESTONE IN ADVANCING INDIA'S DOMESTIC POWER SEMICONDUCTOR ECOSYSTEM.

CYIENT SEMICONDUCTORS LAUNCHES INDIA'S FIRST GAN POWER IC FAMILY LEVERAGING NAVITAS TECHNOLOGY

TORRANCE, CALIF., MAY 07, 2026 (GLOBE NEWSWIRE) -- NAVITAS SEMICONDUCTOR, (NASDAQ: NVTS), AN INDUSTRY LEADER IN NEXT-GENERATION GANFAST GALLIUM NITRIDE (GAN) AND GENESIC SILICON CARBIDE (SIC) POWER SEMICONDUCTORS, TODAY ANNOUNCED THAT CHRIS ALLEXANDRE, CEO, AND TONYA STEVENS, CFO, WILL HOST ONE-ON-ONE MEETINGS WITH INVESTORS AND ANALYSTS REGISTERED TO ATTEND THE FOLLOWING INVESTOR CONFERENCES:

NAVITAS TO PARTICIPATE AT UPCOMING INVESTOR CONFERENCES

TORRANCE, CALIF., MAY 05, 2026 (GLOBE NEWSWIRE) -- NAVITAS SEMICONDUCTOR, (NASDAQ: NVTS), AN INDUSTRY LEADER IN NEXT-GENERATION GANFAST GALLIUM NITRIDE (GAN) AND GENESIC SILICON CARBIDE (SIC) POWER SEMICONDUCTORS, TODAY ANNOUNCED UNAUDITED FINANCIAL RESULTS FOR ITS FIRST QUARTER 2026 ENDED MARCH 31, 2026.

NAVITAS SEMICONDUCTOR ANNOUNCES FIRST QUARTER 2026 FINANCIAL RESULTS

LEE BRINGS OVER 30 YEARS OF SEMICONDUCTOR AND POWER MANAGEMENT EXPERIENCE AS NAVITAS CONTINUES ITS STRATEGIC PIVOT TO HIGH-POWER MARKETS

NAVITAS SEMICONDUCTOR APPOINTS DAVIN LEE AS INDEPENDENT DIRECTOR TO ITS BOARD

TORRANCE, CALIF., APRIL 16, 2026 (GLOBE NEWSWIRE) -- NAVITAS SEMICONDUCTOR (NASDAQ: NVTS) TODAY ANNOUNCED THAT IT WILL REPORT FIRST QUARTER 2026 FINANCIAL RESULTS ON TUESDAY, MAY 5, 2026, AFTER THE MARKET CLOSE.

NAVITAS SEMICONDUCTOR TO REPORT Q1 2026 FINANCIAL RESULTS ON TUESDAY, MAY 5, 2026

TORRANCE, CALIF., APRIL 13, 2026 (GLOBE NEWSWIRE) -- NAVITAS SEMICONDUCTOR, (NASDAQ: NVTS), AN INDUSTRY LEADER IN NEXT-GENERATION GANFAST GALLIUM NITRIDE (GAN) AND GENESIC SILICON CARBIDE (SIC) POWER SEMICONDUCTORS, TODAY ANNOUNCED THE APPOINTMENT OF SEMICONDUCTOR VETERAN, GREGORY M. FISCHER, TO ITS BOARD EFFECTIVE IMMEDIATELY. FISCHER BRINGS EXTENSIVE SEMICONDUCTOR OPERATING EXPERIENCE TO THE BOARD AND WILL STAND FOR REELECTION IN 2027 AS A CLASS III DIRECTOR. HE WILL SERVE ON THE COMPENSATION AND EXECUTIVE STEERING COMMITTEES.

NAVITAS SEMICONDUCTOR APPOINTS GREGORY M. FISCHER AS INDEPENDENT DIRECTOR TO ITS BOARD

THE BREAKTHROUGH, 800 V6 VDC-DC POWER DELIVERY BOARD ELIMINATES TRADITIONAL 48V INTERMEDIATE BUS CONVERTER STAGE WHILE IMPROVING SYSTEM EFFICIENCY, RELIABILITY, COST, AND COMPUTE DENSITY. THE PLATFORM IS BEING SHOWCASED AT NVIDIA GTC 2026 .

NAVITAS DEBUTS REVOLUTIONARY 800 V6 V POWER DELIVERY BOARD AT NVIDIA GTC 2026

SEASONED FINANCE EXECUTIVE BRINGS OVER 30 YEARS OF EXPERTISE TO LEAD FINANCIAL STRATEGY, DRIVE PROFITABLE GROWTH AND ENABLE SCALING AND OPERATIONAL EXCELLENCE AS PART OF THE NAVITAS 2.0 TRANSFORMATION TO HIGH POWER MARKETS

NAVITAS SEMICONDUCTOR BOLSTERS LEADERSHIP WITH APPOINTMENT OF TONYA STEVENS AS CHIEF FINANCIAL OFFICER

QDPAK AND LOW-PROFILE TO247 IN THE LATEST GENESIC 5TH GENERATION TRENCH-ASSISTED PLANAR SIC MOSFET TECHNOLOGY DELIVER SIGNIFICANT IMPROVEMENTS IN PERFORMANCE AND LIFETIME FOR AI DATA CENTERS, GRID AND ENERGY INFRASTRUCTURE, AND INDUSTRIAL ELECTRIFICATION WITH VOLTAGE RATINGS OF 1200 V QDPAK AND LOW-PROFILE TO247 IN THE LATEST GENESIC 5TH GENERATION TRENCH-ASSISTED PLANAR SIC MOSFET TECHNOLOGY DELIVER SIGNIFICANT IMPROVEMENTS IN PERFORMANCE AND LIFETIME FOR AI DATA CENTERS, GRID AND ENERGY INFRASTRUCTURE, AND INDUSTRIAL ELECTRIFICATION WITH VOLTAGE RATINGS OF 1200 V

NAVITAS ADDS TOP-SIDE COOLED QDPAK AND LOW-PROFILE TO-247-4L TO ITS PACKAGE LINE-UP IN THE LATEST 5TH GENERATION GENESIC TECHNOLOGY

FIRST SYSTEMS DEVELOPED BY EPFL FEATURING GENESIC 3300V AND 1200V SIC DEVICES SHOWCASE THE STRENGTH OF NAVITAS' GRID AND ENERGY INFRASTRUCTURE PORTFOLIO, ACCELERATING THE ADOPTION OF 800V DC AI DATA CENTERS. FIRST SYSTEMS DEVELOPED BY EPFL FEATURING GENESIC 3300V AND 1200V SIC DEVICES SHOWCASE THE STRENGTH OF NAVITAS' GRID AND ENERGY INFRASTRUCTURE PORTFOLIO, ACCELERATING THE ADOPTION OF 800V DC AI DATA CENTERS.

NAVITAS, EPFL TO DEMONSTRATE NOVEL SOLID-STATE TRANSFORMER SOLUTION FOR AI DATA CENTER, ENABLING 800V DC IMPLEMENTATION

TORRANCE, CALIF., FEB. 26, 2026 (GLOBE NEWSWIRE) -- NAVITAS SEMICONDUCTOR (NASDAQ: NVTS), A LEADER IN GANFAST GALLIUM NITRIDE (GAN) AND GENESIC SILICON CARBIDE (SIC) POWER SEMICONDUCTORS, WILL EXHIBIT ITS LATEST INNOVATIONS FOR AI DATA CENTERS, PERFORMANCE COMPUTING, ENERGY AND GRID INFRASTRUCTURE, AND INDUSTRIAL ELECTRIFICATION AT APEC 2026 (BOOTH #2027) IN SAN ANTONIO, TEXAS FROM MARCH 22-26. AT THE EVENT, NAVITAS WILL UNVEIL THE 10 KW GAN-POWERED' 800 VTO50 V DC-DC PLATFORM THAT EMPLOYS ADVANCED 650 V AND 100 V GANFAST FETS IN A THREE-LEVEL HALF-BRIDGE ARCHITECTURE WITH SYNCHRONOUS RECTIFICATION TO DELIVER 98.5% PEAK EFFICIENCY. THISFULL-BRICK PACKAGE DESIGN PLATFORM ACHIEVES 2.1 KW/IN POWER DENSITY AND ALSO SUPPORTS + / - 400 VDC STANDARD FOR AI DATACENTERS. ADDITIONALLY, NAVITAS WILL FEATURE A 12KW AI DATA CENTER POWER SUPPLY, WHICH LEVERAGES INTELLIWEAVE DIGITAL CONTROL TO ACHIEVE UNMATCHED EFFICIENCY, POWER DENSITY, AND PERFORMANCE, ALONG WITH AN 8.5 KW OCP POWER SUPPLY AND 4.5 KW CRPS POWER SUPPLY.

NAVITAS TO EXHIBIT BREAKTHROUGH SOLUTIONS FOR AI DATA CENTER, GRID AND ENERGY INFRASTRUCTURE, PERFORMANCE COMPUTING, AND INDUSTRIAL ELECTRIFICATION AT APEC 2026

Navitas Semiconductor Corporation

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