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Navitas Semiconductor Corporation designs, develops, and sells gallium nitride (GaN) power integrated circuits in China, the United States, Taiwan, Korea, and internationally. The company was incorporated in 2013 and is based in Dublin, Ireland.

Navitas Semiconductor Corporation

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TORRANCE, CALIF., JUNE 03, 2025 (GLOBE NEWSWIRE) -- NAVITAS SEMICONDUCTOR (NASDAQ: NVTS), THE INDUSTRY LEADER IN NEXT-GENERATION GANFAST GALLIUM NITRIDE (GAN) AND GENESIC SILICON CARBIDE (SIC) POWER SEMICONDUCTORS, TODAY ANNOUNCED ITS PARTNERSHIP WITH BRIGHTLOOP SUPPORTING THEIR LATEST SERIES OF HYDROGEN FUEL-CELL CHARGERS WITH AUTOMOTIVE QUALIFIED GEN 3 FAST' SIC (G3F) MOSFETS FOR HEAVY-DUTY AGRICULTURAL TRANSPORTATION EQUIPMENT.

NAVITAS & BRIGHTLOOP PARTNERS TO PROVIDE NEXT-GENERATION HYDROGEN FUEL-CELL CHARGING

TORRANCE, CALIF., MAY 30, 2025 (GLOBE NEWSWIRE) -- NAVITAS SEMICONDUCTOR, THE ONLY PURE-PLAY, NEXT-GENERATION POWER SEMICONDUCTOR COMPANY AND INDUSTRY LEADER IN GALLIUM NITRIDE (GAN) POWER ICS AND SILICON CARBIDE (SIC) TECHNOLOGY, HAS ANNOUNCED PARTICIPATION IN THE FOLLOWING UPCOMING INVESTOR EVENTS:

NAVITAS SEMICONDUCTOR TO PARTICIPATE IN UPCOMING INVESTOR EVENTS

NAVITAS' GAN AND SIC TECHNOLOGIES HAVE BEEN SELECTED TO SUPPORT NVIDIA'S 800 V HVDC DATA CENTER POWER INFRASTRUCTURE TO SUPPORT 1 MW IT RACKS AND BEYOND NAVITAS' GAN AND SIC TECHNOLOGIES HAVE BEEN SELECTED TO SUPPORT NVIDIA'S 800 V HVDC DATA CENTER POWER INFRASTRUCTURE TO SUPPORT 1 MW IT RACKS AND BEYOND

NVIDIA SELECTS NAVITAS TO COLLABORATE ON NEXT GENERATION 800 V HVDC ARCHITECTURE

NEXT-GENERATION PSU DESIGNED FOR PRODUCTION' ACHIEVES OCP REQUIREMENTS FOR HIGH-POWER, HIGH-DENSITY SERVER RACKS, ENABLED BY GANSAFE ICS AND GEN-3 FAST SIC MOSFETS NEXT-GENERATION PSU DESIGNED FOR PRODUCTION' ACHIEVES OCP REQUIREMENTS FOR HIGH-POWER, HIGH-DENSITY SERVER RACKS, ENABLED BY GANSAFE ICS AND GEN-3 FAST SIC MOSFETS

NAVITAS LAUNCHES INDUSTRY-LEADING 12KW GAN & SIC PLATFORM, ACHIEVING 97.8% EFFICIENCY FOR HYPERSCALE AI DATA CENTERS

LATEST AI DATA CENTER PSU PLATFORM ENABLED BY GANSAFE, GENESIC, AND INTELLIWEAVE WILL SHOWCASE INDUSTRY-LEADING EFFICIENCY & POWER DENSITY FOR HYPERSCALERS LATEST AI DATA CENTER PSU PLATFORM ENABLED BY GANSAFE, GENESIC, AND INTELLIWEAVE WILL SHOWCASE INDUSTRY-LEADING EFFICIENCY & POWER DENSITY FOR HYPERSCALERS

NAVITAS HOSTS AI TECH NIGHT TO REVEAL NEXT GENERATION PLATFORM FOR HYPERSCALE DATA CENTERS

TORRANCE, CALIF., MAY 14, 2025 (GLOBE NEWSWIRE) -- NAVITAS SEMICONDUCTOR (NASDAQ: NVTS), THE ONLY PURE-PLAY, NEXT-GENERATION POWER SEMICONDUCTOR COMPANY AND INDUSTRY LEADER IN GALLIUM NITRIDE (GAN) POWER ICS AND SILICON CARBIDE (SIC) TECHNOLOGY, TODAY ANNOUNCED THE APPOINTMENT OF CRISTIANO AMORUSO TO THE COMPANY'S BOARD OF DIRECTORS, EFFECTIVE IMMEDIATELY.

NAVITAS SEMICONDUCTOR APPOINTS CRISTIANO AMORUSO TO BOARD OF DIRECTORS

GAN EXPECTED PRODUCTION RAMP IN NEW MAINSTREAM MARKETS IN AI DATA CENTERS, SOLAR MICRO-INVERTERS AND EV OVER NEXT 12 MONTHS GAN SETS INDUSTRY BENCHMARK WITH OVER 250M SHIPPED AND 100PPB FIELD RELIABILITY SIC SETS INDUSTRY BENCHMARK WITH RELIABILITY EXCEEDING AEC STANDARDS AND ULTRA-HIGH VOLTAGE 2.3KV TO 6.5V, WITH EXPANSION INTO COMMERCIAL EVS TORRANCE, CALIF., MAY 05, 2025 (GLOBE NEWSWIRE) -- NAVITAS SEMICONDUCTOR (NASDAQ: NVTS), THE ONLY PURE-PLAY, NEXT-GENERATION POWER SEMICONDUCTOR COMPANY AND INDUSTRY LEADER IN GALLIUM NITRIDE (GAN) POWER ICS AND SILICON CARBIDE (SIC) TECHNOLOGY, TODAY ANNOUNCED UNAUDITED FINANCIAL RESULTS FOR THE FIRST QUARTER ENDED MARCH31, 2025.

NAVITAS SEMICONDUCTOR ANNOUNCES FIRST QUARTER 2025 FINANCIAL RESULTS

UNPRECEDENTED RELIABILITY COMBINED WITH SUPERIOR PERFORMANCE & OPTIMIZED, HIGH-CREEPAGE PACKAGE SETS A NEW BENCHMARK IN AUTOMOTIVE AND INDUSTRIAL APPLICATIONS UNPRECEDENTED RELIABILITY COMBINED WITH SUPERIOR PERFORMANCE & OPTIMIZED, HIGH-CREEPAGE PACKAGE SETS A NEW BENCHMARK IN AUTOMOTIVE AND INDUSTRIAL APPLICATIONS

NAVITAS REDEFINES RELIABILITY WITH INDUSTRY'S FIRST AUTOMOTIVE AEC-PLUS' QUALIFIED SIC MOSFETS IN HV-T2PAK TOP-SIDE COOLED PACKAGE

TORRANCE, CALIF., MAY 01, 2025 (GLOBE NEWSWIRE) -- NAVITAS SEMICONDUCTOR (NASDAQ: NVTS), THE ONLY PURE-PLAY, NEXT-GENERATION POWER SEMICONDUCTOR COMPANY AND INDUSTRY LEADER IN GALLIUM NITRIDE (GAN) POWER ICS AND SILICON CARBIDE (SIC) TECHNOLOGY,HAS ANNOUNCED A NEW FAMILY OF GANSENSE MOTOR DRIVE ICS TARGETING HOME APPLIANCES AND INDUSTRIAL DRIVES UP TO 600 W.

NAVITAS GANSENSE MOTOR DRIVE ICS DELIVER INDUSTRY-LEADING PERFORMANCE, EFFICIENCY, & ROBUSTNESS IN HOME APPLIANCES & INDUSTRIAL APPLICATIONS

RICHARD HENDRIX APPOINTED CHAIR OF THE BOARD EXECUTIVE STEERING COMMITTEE FORMED TO ADVANCE GROWTH STRATEGY TORRANCE, CALIF., APRIL 24, 2025 (GLOBE NEWSWIRE) -- NAVITAS SEMICONDUCTOR (NASDAQ: NVTS), THE ONLY PURE-PLAY, NEXT-GENERATION POWER SEMICONDUCTOR COMPANY AND INDUSTRY LEADER IN GALLIUM NITRIDE (GAN) POWER ICS AND SILICON CARBIDE (SIC) TECHNOLOGY, TODAY ANNOUNCED ACTIONS BY ITS BOARD OF DIRECTORS TO ADVANCE THE COMPANY'S GROWTH STRATEGY.

NAVITAS SEMICONDUCTOR ANNOUNCES CORPORATE GOVERNANCE ENHANCEMENTS

LATEST RELEASES INCLUDE BI-DIRECTIONAL GANFAST ICS WITH ISOFAST DRIVERS, AUTO-QUALIFIED GANSAFE ICS, DEDICATED GANSENSE MOTOR DRIVE ICS, AND HIGH-RELIABILITY SICPAK MODULES LATEST RELEASES INCLUDE BI-DIRECTIONAL GANFAST ICS WITH ISOFAST DRIVERS, AUTO-QUALIFIED GANSAFE ICS, DEDICATED GANSENSE MOTOR DRIVE ICS, AND HIGH-RELIABILITY SICPAK MODULES

NAVITAS SHOWCASES ADVANCES IN GAN AND SIC TECHNOLOGIES, INCLUDING WORLD'S FIRST PRODUCTION RELEASED 650V BI-DIRECTIONAL GANFAST ICS AT PCIM 2025

TORRANCE, CALIF., APRIL 21, 2025 (GLOBE NEWSWIRE) -- NAVITAS SEMICONDUCTOR (NASDAQ: NVTS) TODAY ANNOUNCED THAT IT WILL REPORT FIRST QUARTER 2025 FINANCIAL RESULTS AFTER THE MARKET CLOSE ON MONDAY, MAY 5TH, 2025. MANAGEMENT WILL HOST A CONFERENCE CALL AND LIVE WEBCAST TO PRESENT THE COMPANY'S FINANCIAL RESULTS AND ANSWER QUESTIONS FROM THE FINANCIAL ANALYST COMMUNITY AT 2:00 P.M. PACIFIC / 5:00 P.M. EASTERN THAT SAME EVENING.

NAVITAS SEMICONDUCTOR TO REPORT Q1 2025 FINANCIAL RESULTS ON MONDAY, MAY 5TH, 2025

ADVANCED LOW-COST EPOXY-RESIN POTTING TECHNOLOGY ENABLES 5X LOWER THERMAL RESISTANCE SHIFT FOR EXTENDED SYSTEM LIFETIME ADVANCED LOW-COST EPOXY-RESIN POTTING TECHNOLOGY ENABLES 5X LOWER THERMAL RESISTANCE SHIFT FOR EXTENDED SYSTEM LIFETIME

NAVITAS' LATEST SICPAK POWER MODULES SET A NEW STANDARD FOR UNPARALLELED RELIABILITY & EFFICIENT HIGH-TEMPERATURE PERFORMANCE

TORRANCE, CALIF., APRIL 15, 2025 (GLOBE NEWSWIRE) -- NAVITAS SEMICONDUCTOR (NASDAQ: NVTS), THE ONLY PURE-PLAY, NEXT-GENERATION POWER SEMICONDUCTOR COMPANY AND INDUSTRY LEADER IN GALLIUM NITRIDE (GAN) POWER ICS AND SILICON CARBIDE (SIC) TECHNOLOGY, HAS ANNOUNCED ITS HIGH-POWER GANSAFE ICS ACHIEVE AUTOMOTIVE QUALIFICATION FOR BOTH AEC-Q100 AND AEC-Q101, SHOWCASING GAN'S NEXT INFLECTION INTO THE AUTOMOTIVE MARKET.

NAVITAS ANNOUNCES AUTOMOTIVE QUALIFICATION OF HIGH-POWER GANSAFE ICS

GANSENSE TECHNOLOGY BOOSTS 8X POWER FOR AI DATA CENTERS, TELECOMMUNICATIONS, AND INDUSTRIAL EQUIPMENT IN ULTRA-HIGH POWER DENSITY DC-DC CONVERTERS GANSENSE TECHNOLOGY BOOSTS 8X POWER FOR AI DATA CENTERS, TELECOMMUNICATIONS, AND INDUSTRIAL EQUIPMENT IN ULTRA-HIGH POWER DENSITY DC-DC CONVERTERS

CORRECTION  NAVITAS PARTNERS WITH GREAT WALL POWER FOR NEXT GENERATION 400V-DC POWER ARCHITECTURE FOR AI DATA CENTERS

JOINT LAB COLLABORATION EXPECTED TO ACCELERATE GAN & SIC ADOPTION IN AI DATA CENTERS, EV, SOLAR AND ENERGY STORAGE SYSTEMS (ESS) JOINT LAB COLLABORATION EXPECTED TO ACCELERATE GAN & SIC ADOPTION IN AI DATA CENTERS, EV, SOLAR AND ENERGY STORAGE SYSTEMS (ESS)

Navitas Semiconductor Corporation

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